Wireless applications require a low power technology that enables digital/analog/RF functions on the same chip. FinFET technology presents a competitive alternative to planar CMOS as it features good digital, analog and low-frequency noise performances. Also, very good matching performance is presented here for the first time. Moreover, FinFETs are shown to be attractive for low-power applications below 10 GHz. The suitability of Fin varactors is evaluated and tradeoffs are given. An inductorless oscillator with large tuning range (1-8.5 GHz) for low-power wideband applications is demonstrated for the first time.
Parvais, B, Gustin, C, De Heyn, V, Loo, J, Dehan, M, Subramanian, V, Mercha, A, Collaert, N, Rooyackers, R, Jurczak, M, Wambacq, P & Decoutere, S 2006, Suitability of FinFET technology for low-power mixed-signal applications. in 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06., 1669383, 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06, IEEE Computer Society, Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference, Padova, Italy, 24/05/06. https://doi.org/10.1109/icicdt.2006.220796
Parvais, B., Gustin, C., De Heyn, V., Loo, J., Dehan, M., Subramanian, V., Mercha, A., Collaert, N., Rooyackers, R., Jurczak, M., Wambacq, P., & Decoutere, S. (2006). Suitability of FinFET technology for low-power mixed-signal applications. In 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06 Article 1669383 (2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06). IEEE Computer Society. https://doi.org/10.1109/icicdt.2006.220796
@inproceedings{71e188e9f6f9478daaa71d2ac7938dcf,
title = "Suitability of FinFET technology for low-power mixed-signal applications",
abstract = "Wireless applications require a low power technology that enables digital/analog/RF functions on the same chip. FinFET technology presents a competitive alternative to planar CMOS as it features good digital, analog and low-frequency noise performances. Also, very good matching performance is presented here for the first time. Moreover, FinFETs are shown to be attractive for low-power applications below 10 GHz. The suitability of Fin varactors is evaluated and tradeoffs are given. An inductorless oscillator with large tuning range (1-8.5 GHz) for low-power wideband applications is demonstrated for the first time.",
author = "B. Parvais and C. Gustin and {De Heyn}, V. and J. Loo and M. Dehan and V. Subramanian and A. Mercha and N. Collaert and R. Rooyackers and M. Jurczak and P. Wambacq and S. Decoutere",
year = "2006",
month = jan,
day = "1",
doi = "10.1109/icicdt.2006.220796",
language = "English",
isbn = "1424400988",
series = "2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06",
publisher = "IEEE Computer Society",
booktitle = "2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06",
address = "United States",
note = " Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference ; Conference date: 24-05-2006 Through 26-05-2006",
}