Raskin, J. P., Laconte, J., Akheyar, A., Dupont, C., Adriaensen, S., Nève, A., Dehan, M., Parvais, B., Vanhoenacker, D., Demeûs, L., Delatte, P., Dessard, V., & Flandre, D. (2001). Fully-depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems. Revue HF Tijdschrift, (2), 53-68.

@misc{8ebce4079a8d4de0835416a0544fb8bf,
title = "Fully-depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems",
abstract = "Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully-depleted (FD) SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 μm may emerge as one of the most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350°C. Moreover, CMOS-compatible microfabrication processes have been developed in order to build low cost, low power, low voltage MEMS for various applications in RF communications, biomedical engineering, domotic, etc.",
author = "Raskin, {J. P.} and J. Laconte and A. Akheyar and C. Dupont and S. Adriaensen and A. N{\`e}ve and M. Dehan and B. Parvais and D. Vanhoenacker and L. Deme{\^u}s and P. Delatte and V. Dessard and D. Flandre",
year = "2001",
month = jan,
day = "1",
language = "English",
pages = "53--68",
journal = "Revue HF Tijdschrift",
issn = "0035-3248",
publisher = "Soci{\'e}t{\'e} Royale Belge des Electriciens",
}