The first surface-textured thin-film GaInP/AlGaInP light-emitting diodes operating at a wavelength of 650 nm are presented, Unencapsulated devices reach an external quantum efficiency of 24%, which is further increased to 31% by encapsulation. The optical output power is 4mW at a current of 7mA
Rooman, C, Windisch, R, De Hondt, M, Modak, P, Moerman, I, Mijlemans, P, Dutta, B, Borghs, G, Vounckx, R, Kuijk, M & Heremans, P 2001, 'High-efficiency thin-film light-emitting diodes at 650 nm', Electronics Letters, vol. 37, no. 13, pp. 852-853.
Rooman, C., Windisch, R., De Hondt, M., Modak, P., Moerman, I., Mijlemans, P., Dutta, B., Borghs, G., Vounckx, R., Kuijk, M., & Heremans, P. (2001). High-efficiency thin-film light-emitting diodes at 650 nm. Electronics Letters, 37(13), 852-853.
@article{1ba3e2cf0abb46ef97e08a0f83dd3b7a,
title = "High-efficiency thin-film light-emitting diodes at 650 nm",
abstract = "The first surface-textured thin-film GaInP/AlGaInP light-emitting diodes operating at a wavelength of 650 nm are presented, Unencapsulated devices reach an external quantum efficiency of 24%, which is further increased to 31% by encapsulation. The optical output power is 4mW at a current of 7mA",
keywords = "EXTERNAL QUANTUM EFFICIENCY",
author = "Cathleen Rooman and Reiner Windisch and {De Hondt}, M. and P. Modak and I. Moerman and P. Mijlemans and Barun Dutta and Gustaaf Borghs and Roger Vounckx and Maarten Kuijk and P. Heremans",
note = "Electronics Letters, Vol. 37, Nr. 13, pp. 852-853.",
year = "2001",
month = jun,
day = "21",
language = "English",
volume = "37",
pages = "852--853",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "13",
}