We present a versatile III-V Heterojunction Bipolar Transistor (HBT) technology on 300 mm Si which can be adapted to RF applications ranging from microwave to mmWave bands. We demonstrate its potential by fabricating HBTs based on the InGaP/GaAsSb/InGaAs material system monolithically integrated on 300 mm Si substrate by varying the In and Sb content in the corresponding device layers while achieving a very low threading dislocation density (TDD) (< 5× 106cm-2). An HBT device stack, grown lattice-matched to fully relaxed Ino.3Ga0.3.7 3Ga0.7As nano-ridges on trench-patterned Si, shows> 50x improvement in the collector current density as compared to our InGaP/GaAs HBTs without impacting the interface quality of underlying hetero-interfaces as indicated by the ideality factors of the base (1.8) and collector (1) currents, respectively. ft and fmax of 36 GHz and 13.7 GHz, respectively, are reported for an emitter width of 5 μm.
Kumar, A, Yadav, S, Vais, A, Boccardi, G, Mols, Y, Alcotte, R, Parvais, B, Kunert, B & Collaert, N 2024, An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications. in 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024. IEEE MTT-S International Microwave Symposium Digest, Institute of Electrical and Electronics Engineers Inc., pp. 940-943, 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024, Washington, United States, 16/06/24. https://doi.org/10.1109/IMS40175.2024.10600299
Kumar, A., Yadav, S., Vais, A., Boccardi, G., Mols, Y., Alcotte, R., Parvais, B., Kunert, B., & Collaert, N. (2024). An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications. In 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024 (pp. 940-943). (IEEE MTT-S International Microwave Symposium Digest). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMS40175.2024.10600299
@inproceedings{762c54b4ac134909a5bd716db92029d2,
title = "An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications",
abstract = "We present a versatile III-V Heterojunction Bipolar Transistor (HBT) technology on 300 mm Si which can be adapted to RF applications ranging from microwave to mmWave bands. We demonstrate its potential by fabricating HBTs based on the InGaP/GaAsSb/InGaAs material system monolithically integrated on 300 mm Si substrate by varying the In and Sb content in the corresponding device layers while achieving a very low threading dislocation density (TDD) (< 5× 106cm-2). An HBT device stack, grown lattice-matched to fully relaxed Ino.3Ga0.3.7 3Ga0.7As nano-ridges on trench-patterned Si, shows> 50x improvement in the collector current density as compared to our InGaP/GaAs HBTs without impacting the interface quality of underlying hetero-interfaces as indicated by the ideality factors of the base (1.8) and collector (1) currents, respectively. ft and fmax of 36 GHz and 13.7 GHz, respectively, are reported for an emitter width of 5 μm.",
keywords = "6G, Beyond 5G, HBT, III-V-on-Si",
author = "Annie Kumar and Sachin Yadav and Abhitosh Vais and Guillaume Boccardi and Yves Mols and Reynald Alcotte and Bertrand Parvais and Bernardette Kunert and Nadine Collaert",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024 ; Conference date: 16-06-2024 Through 21-06-2024",
year = "2024",
doi = "10.1109/IMS40175.2024.10600299",
language = "English",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "940--943",
booktitle = "2024 IEEE/MTT-S International Microwave Symposium, IMS 2024",
address = "United States",
}