Borremans, J., Wambacq, P., & Linten, D. (2007). An ESD-Protected DC-to-6GHz 9.7mW LNA in 90nm Digital CMOS. In Technical Digest of the International Solid State Circuits Conference (pp. 422-423). (Technical Digest of the International Solid State Circuits Conference).

@inproceedings{56a4ce74f9f24222856cdd84d94e9eaa,
title = "An ESD-Protected DC-to-6GHz 9.7mW LNA in 90nm Digital CMOS",
abstract = "A low cost 50x35um2, DC-6 GHz LNA has been designed in digital 90nm CMOS. It consumes 8.1 mA from a 1.2 V supply, for a minimum NF of 2.5 dB and 17 dB of gain. In the 6 GHz bandwidth, S11 is below -10 dB and the IIP3 varies between -16 and -7 dBm. ESD protection of 3.2 kV HBM is implemented, as well as an optional second stage with gain selection adding up to 4dB of gain.",
keywords = "cmos, lna, inductorless",
author = "Jonathan Borremans and Piet Wambacq and Dimitri Linten",
year = "2007",
month = feb,
day = "1",
language = "English",
series = "Technical Digest of the International Solid State Circuits Conference",
pages = "422--423",
booktitle = "Technical Digest of the International Solid State Circuits Conference",
note = "Finds and Results from the Swedish Cyprus Expedition: A Gender Perspective at the Medelhavsmuseet ; Conference date: 21-09-2009 Through 25-09-2009",
}