Subramanian, V., Parvais, B., Borremans, J., Mercha, A., Linten, D., Wambacq, P., Loo, J., Dehan, M., Collaert, N., Kubicek, S., Lander, R. J. P., Hooker, J. C., Cubaynes, F. N., Donnay, S., Jurczak, M., Groeseneken, G., Sansen, W., & Decoutere, S. (2006). Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs. In IEE Technical Digest of Eectron Devices Meeting (pp. 898-901). (IEE Technical Digest of Eectron Devices Meeting).

@inproceedings{6d56cf6d7cbe46ddbf5da84babfcb95c,
title = "Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs",
abstract = "Comparison of digital and analog Figures-of-Merit of FinFETs and planar bulk MOSFETs reveals an interesting trade-off in analog/RF design space. It is seen that FinFETs possess key advantages over bulk FETs for applications around 5 GHz where the performance-power trade-off is important. In case of higher frequency applications bulk MOSFETs are shown to hold the advantage on account of their higher transconductance (Gm), provided a degraded voltage gain and a higher leakage current can be tolerated.",
keywords = "scaling, cmos",
author = "V. Subramanian and Bertrand Parvais and Jonathan Borremans and A. Mercha and Dimitri Linten and Piet Wambacq and Josine Loo and M. Dehan and Nadine Collaert and S Kubicek and Lander, {R. J. P.} and J.c. Hooker and Cubaynes, {F. N.} and S. Donnay and M. Jurczak and G. Groeseneken and Willy Sansen and S. Decoutere",
year = "2006",
month = dec,
day = "1",
language = "English",
isbn = "0-7803-9268-X",
series = "IEE Technical Digest of Eectron Devices Meeting",
pages = "898--901",
booktitle = "IEE Technical Digest of Eectron Devices Meeting",
note = "Finds and Results from the Swedish Cyprus Expedition: A Gender Perspective at the Medelhavsmuseet ; Conference date: 21-09-2009 Through 25-09-2009",
}