Publication Details
Overview
 
 
Maria Glória Caño de Andrade, Luis Felipe de Oliveira Bergamim, Braz Baptista Júnior, Carlos Roberto Nogueira, Fábio Alex da Silva, Kenichiro Takakura, Bertrand Parvais, E. Simoen, Eddy Simoen
 

Solid-State Electronics

Contribution To Journal

Abstract 

In this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (V D = 50 mV) for different channel lengths (L) and widths (W) at different temperatures (5.32 °C till 100 °C). The origin of the noise will be analyzed to understand the physical mechanisms involved. It is shown that the Low-Frequency (LF) noise is dominated by 1/f noise, originating from number fluctuations. Additionally, in shorter devices, a higher 1/f noise PSD is found. The LF noise characteristics indicate that the AlGaN/GaN HEMTs on silicon substrates can be a promising candidate for analog and Radio Frequency applications (RF).

Reference 
 
 
DOI scopus