Publication Details
Overview
 
 
G. Rzepa, M. Karner, O. Baumgartner, G. Strof, F. Schanovsky, F. Mitterbauer, C. Kernstock, H. W. Karner, P. Weckx, G. Hellings, D. Claes, Z. Wu, Y. Xiang, T. Chiarella, Bertrand Parvais, J. Mitard, J. Franco, B. Kaczer, D. Linten, Z. Stanojevic
 

2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings

Contribution To Book Anthology

Abstract 

Reliability and variability-aware simulations of logic cells are essential to correctly analyze and predict the performance of upcoming technologies. A simulation flow for DTCO is presented here, which combines the accuracy of TCAD with the performance of SPICE-utilizing parasitic extractions, the impedance field method for variations, and the compact-physics simulator Comphy for reliability. Good agreement with experimental RO performance of iN14 is demonstrated and projections to N3 FinFET and nanosheet technologies are made.

Reference 
 
 
DOI scopus