We report on the development of mm-wave GaN-on-Si AlGaN HEMTs integrated with a 3 level Cu damascene BEOL flow on 200mm Si <111> wafers. Optimizations of the gate metal stack, contact resistance and gate length scaling to 110nm result in devices with a peak gm of 430 mS/mm and an fMAX of 135 GHz. While wafer warp was found to increase slightly through the processing of 3 levels of 1µm thick Cu metal, no significant deterioration was observed between devices measured at Metal 1 and Metal 3.
Parvais, B , Alian, A, Peralagu, U, Rodriguez, R, Yadav, S, Khaled, A, Elkashlan, RY, Putcha, V, Sibaja-Hernandez, A, Zhao, M , Wambacq, P , Collaert, N & Waldron, N 2020, GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL . in 2020 IEEE International Electron Devices Meeting, IEDM 2020. , 9372056, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2020-December, Institute of Electrical and Electronics Engineers Inc., pp. 8.1.1-8.1.4, 66th Annual IEEE International Electron Devices Meeting, IEDM 2020, Virtual, San Francisco, United States, 12/12/20 .
Parvais, B. , Alian, A., Peralagu, U., Rodriguez, R., Yadav, S., Khaled, A., Elkashlan, R. Y., Putcha, V., Sibaja-Hernandez, A., Zhao, M. , Wambacq, P. , Collaert, N., & Waldron, N. (2020). GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL . In 2020 IEEE International Electron Devices Meeting, IEDM 2020 (pp. 8.1.1-8.1.4). [9372056] (Technical Digest - International Electron Devices Meeting, IEDM Vol. 2020-December). Institute of Electrical and Electronics Engineers Inc..
@inproceedings{3fec8ccfdfd547bd8b107ecaf166404f,
title = " GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL " ,
abstract = " We report on the development of mm-wave GaN-on-Si AlGaN HEMTs integrated with a 3 level Cu damascene BEOL flow on 200mm Si <111> wafers. Optimizations of the gate metal stack, contact resistance and gate length scaling to 110nm result in devices with a peak gm of 430 mS/mm and an fMAX of 135 GHz. While wafer warp was found to increase slightly through the processing of 3 levels of 1µm thick Cu metal, no significant deterioration was observed between devices measured at Metal 1 and Metal 3. " ,
author = " B. Parvais and A. Alian and Uthayasankaran Peralagu and Raul Rodriguez and Sachin Yadav and A. Khaled and Elkashlan, {R. Y.} and V. Putcha and A. Sibaja-Hernandez and M. Zhao and P. Wambacq and Nadine Collaert and N. Waldron " ,
year = " 2020 " ,
month = dec,
day = " 12 " ,
doi = " 10.1109/IEDM13553.2020.9372056 " ,
language = " English " ,
series = " Technical Digest - International Electron Devices Meeting, IEDM " ,
publisher = " Institute of Electrical and Electronics Engineers Inc. " ,
pages = " 8.1.18.1.4 " ,
booktitle = " 2020 IEEE International Electron Devices Meeting, IEDM 2020 " ,
address = " United States " ,
note = " 66th Annual IEEE International Electron Devices Meeting, IEDM 2020 Conference date: 12-12-2020 Through 18-12-2020 " ,
}