Publication Details
Akshay Visweswaran, Alexander Haag, Carmine de Martino, Karina Schneider, Tim Maiwald, Bastien Vignon, Klaus Aufinger, Marco Spirito, Thomas Zwick, Piet Wambacq

Proceedings of the 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

Contribution To Book Anthology


We present a 132-147GHz power source based on four power amplifiers whose outputs are combined into a compact (0.52x0.48mm2 footprint) dielectric resonator antenna mounted on the chip face. The source, prototyped in 0.13µm SiGe BiCMOS, demonstrates an EIRP of 27dBm with a power-added efficiency of 13.8 %. Individual PAs deliver a peak Psat of 15dBm over a 3-dB bandwidth of 116-152GHz. Excited by shorted patches on chip, the maximum efficiency of the hybrid antenna is 80% over a 16% relative bandwidth. The EIRP and transmitted RF power are the highest reported for D-band silicon-based transmitters.

DOI scopus