A complemetary metal-oxide-semiconductor (CMOS) lock-in pixel sensor based on a current-assisted photonic demodulation (CAPD) detector is described. The CAPD detector provides high demodulation contrast and yields excellent photo-response. The prototype followed standard active pixel sensor (APS) architecture and was fabricated using a 0.6 um CMOS process from AMS. We obtained a near infrared (NIR) light responsivity of 0.26 A/W at 860 nm. The pixel exhibits demodulation contrast of nearly 100% at low frequencies and above 90% even up to 2 MHz. The phase response is linear up to 2 MHz, and even up to 10 MHz with the appropriate phase extraction equations.
Van Der Tempel, W, Van Nieuwenhove, D, Grootjans, R & Kuijk, M 2007, 'Lock-in Pixel Using a Current-Assisted Photonic Demodulator Implemented in 0.6 μm Standard Complemetary Metal-Oxide-Semiconductor', Japanese Journal of Applied Physics, vol. 46, no. Issue 4B, pp. 2377-2380.
Van Der Tempel, W., Van Nieuwenhove, D., Grootjans, R., & Kuijk, M. (2007). Lock-in Pixel Using a Current-Assisted Photonic Demodulator Implemented in 0.6 μm Standard Complemetary Metal-Oxide-Semiconductor. Japanese Journal of Applied Physics, 46(Issue 4B), 2377-2380.
@article{9c4f60359c0c4613a1ca6ff71dfa07ae,
title = "Lock-in Pixel Using a Current-Assisted Photonic Demodulator Implemented in 0.6 μm Standard Complemetary Metal-Oxide-Semiconductor",
abstract = "A complemetary metal-oxide-semiconductor (CMOS) lock-in pixel sensor based on a current-assisted photonic demodulation (CAPD) detector is described. The CAPD detector provides high demodulation contrast and yields excellent photo-response. The prototype followed standard active pixel sensor (APS) architecture and was fabricated using a 0.6 um CMOS process from AMS. We obtained a near infrared (NIR) light responsivity of 0.26 A/W at 860 nm. The pixel exhibits demodulation contrast of nearly 100% at low frequencies and above 90% even up to 2 MHz. The phase response is linear up to 2 MHz, and even up to 10 MHz with the appropriate phase extraction equations.",
keywords = "3D imaging, ranging sensor, CMOS, CAPD",
author = "{Van Der Tempel}, Ward and {Van Nieuwenhove}, Daniel and Riemer Grootjans and Maarten Kuijk",
year = "2007",
month = apr,
day = "1",
language = "English",
volume = "46",
pages = "2377--2380",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "Issue 4B",
}