Publication Details
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, Rana ElKashlan, Ahmad Khaled, Raul Rodriguez, Sachin Yadav, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Nadine Collaert, Piet Wambacq, Bertrand Parvais
 

2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

Contribution To Book Anthology

Abstract 

We examine the influence of scaling the GaN channel thickness from 100nm to 35nm on the RF performance for GaN HEMTs on Si with a cGaN back-barrier with gate lengths ranging from 70nm to 190nm. Thinner GaN channels notably improve the short channel effects. However, there is a degradation in the on-state performance associated with an increase in dispersion. These trade-offs translate to a ~33%, ~20% decline in fT,fMAX respectively, for 70nm devices. While the large-signal metrics, PSAT and PAE, at 6GHz drop by ~46% and ~18%, respectively. We also consider the lateral downscaling of the gate-to-drain and gate-to-source spacings, which proves beneficial in boosting PSAT, up to 3.4W/mm, by increasing the extrinsic transconductance by ~20%.

Reference 
 
 
DOI scopus