In this paper, we will discuss the progress that has been made in upscaling GaN and InP to a Si platform as well as making them CMOS and 3D compatible to enable the heterogeneous systems that will be needed for 5G mm-wave and 6G sub-THz frequencies for high-capacity wireless communication.
Collaert, N, Alian, A, Banerjee, A, Boccardi, G, Cardinael, P, Chauhan, V, Desset, C, Elkashlan, R, Khaled, A, Ingels, M, Kunert, B, Mols, Y, O'Sullivan, B, Peralagu, U, Pinho, N, Rodriguez, R, Sibaja-Hernandez, A, Sinha, S, Sun, X, Vais, A, Vermeersch, B, Yadav, S , Yan, D , Yu, H, Zhang, Y, Zhao, M, Van Driessche, J, Gramegna, G , Wambacq, P , Parvais, B & Peeters, M 2022, III-V/III-N technologies for next generation high-capacity wireless communication . in 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, vol. 2022-December, Institute of Electrical and Electronics Engineers Inc., pp. 1151-1154, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, United States, 3/12/22 .
Collaert, N., Alian, A., Banerjee, A., Boccardi, G., Cardinael, P., Chauhan, V., Desset, C., Elkashlan, R., Khaled, A., Ingels, M., Kunert, B., Mols, Y., O'Sullivan, B., Peralagu, U., Pinho, N., Rodriguez, R., Sibaja-Hernandez, A., Sinha, S., Sun, X., ... Peeters, M. (2022). III-V/III-N technologies for next generation high-capacity wireless communication . In 2022 International Electron Devices Meeting, IEDM 2022 (pp. 1151-1154). (Technical Digest - International Electron Devices Meeting, IEDM Vol. 2022-December). Institute of Electrical and Electronics Engineers Inc..
@inproceedings{231e4d0540f048b9b77e9f40a93fee3f,
title = " III-V/III-N technologies for next generation high-capacity wireless communication " ,
abstract = " In this paper, we will discuss the progress that has been made in upscaling GaN and InP to a Si platform as well as making them CMOS and 3D compatible to enable the heterogeneous systems that will be needed for 5G mm-wave and 6G sub-THz frequencies for high-capacity wireless communication. " ,
author = " N. Collaert and A. Alian and A. Banerjee and G. Boccardi and P. Cardinael and V. Chauhan and C. Desset and R. Elkashlan and A. Khaled and M. Ingels and B. Kunert and Y. Mols and B. O'Sullivan and U. Peralagu and N. Pinho and R. Rodriguez and A. Sibaja-Hernandez and S. Sinha and X. Sun and A. Vais and B. Vermeersch and S. Yadav and D. Yan and H. Yu and Y. Zhang and M. Zhao and {Van Driessche}, J. and G. Gramegna and P. Wambacq and B. Parvais and M. Peeters " ,
note = " Funding Information: ACKNOWLEDGMENT The contributions of the Advanced RF and 3D system integration research teams at imec are acknowledged. This work is supported by imec{ extquoteright}s IIAP program members and partially supported by the H2020 project COREnect (Grant Agreement no. 956830). REFERENCES Publisher Copyright: { extcopyright} 2022 IEEE. Copyright: Copyright 2023 Elsevier B.V., All rights reserved. 2022 International Electron Devices Meeting, IEDM 2022 Conference date: 03-12-2022 Through 07-12-2022 " ,
year = " 2022 " ,
doi = " 10.1109/IEDM45625.2022.10019555 " ,
language = " English " ,
series = " Technical Digest - International Electron Devices Meeting, IEDM " ,
publisher = " Institute of Electrical and Electronics Engineers Inc. " ,
pages = " 11511154 " ,
booktitle = " 2022 International Electron Devices Meeting, IEDM 2022 " ,
address = " United States " ,
}