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Dongyang Yan, Sehoon Park, Yang Zhang, Dries Peumans, Mark Ingels, Piet Wambacq
 

18th European Microwave Integrated Circuits Conference

Contribution To Book Anthology

Abstract 

This paper presents a 0.15µm GaN power amplifier (PA) for 5G applications. The differential two-stage PA contains a high-order interstage matching network for AM-PM distortion compensation without adding any extra active device. The implemented PA achieves a peak power added efficiency (PAEsat) of 25.5% and saturated output power (Psat) of 32.1dBm at 26GHz. The simulation and measurement results show less than 1 degree AM-PM variation up to Psat across a 24GHz to 30GHz frequency band.

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