Publication Details
Overview
 
 
Simone Esposto, Giuliano Sisto, Ivan Ciofi, Kristof Croes, Dragomir Milojevic, Houman Zahedmanesh
 

International Integrated Reliability Workshop IIRW 2023

Contribution To Book Anthology

Abstract 

Abstract—Addressing electromigration (EM) reliability at system-level poses significant challenges, particularly in the context of advanced nodes. Utilizing physics-based models for such circuits becomes impractical due to excessive computational cost. Conversely, the conventional designer approach to EM-compliance checks tends to be overly simplistic, as it neglects the statistical impact of interconnect population on the chip-failure probability. In this study, a statistical approach, known as Statistical Electromigration Budgeting (SEB), is employed to evaluate the EM reliability of a Power Delivery Network (PDN) in a commercial design. As part of the study, various advanced metallization options are applied to lowest metal layers (Mx) to highlight the need for SEB approaches for EM-compliance screening. Implementation of ruthenium (Ru) via prefill results in a significant 2.5× improvement in system EM lifetime with respect to dual damascene copper (DD-Cu) metallization, thus highlighting the impact of via EM. In contrast, ruthenium metallization, known for being extremely resilient to EM, exhibits an impressive 10× increase in system EM lifetime. Moreover, considering the short-length effect (SLE) improves lifetime of DD-Cu and via prefill options by 2.5× and 1.5×, respectively.

Reference 
 
 
VUB