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This paper analyses the environmental impact of indium phosphide (InP) based RF technologies for future 6G system. Nanoridge engineering (NRE) is considered, given its ability to enable mass production of InP heterojunction bipolar transistor (HBT) on 300mm Si wafer with reduced mismatch defect density. A life cycle assessment (LCA) is performed, and we estimate the Global Warming Potential (GWP) to 2.46kgCO2, eq/cm2 and the water consumption to 18.2 L/cm2 (cradle-to-gate). While InP HBTs enable the performance required for future communication systems, its production leads to 30% CO2, eq and 11% water usage higher than CMOS 28nm technology. The evaluation of the impact of the production of InP wafer is challenging : we find a variation of a factor 5.8x depending on the scenario considered.