Chen, C. , Gao, B., Xue, J., Li, Z., Wang, J., Dai, Y., Zhang, Z., Zhao, W. , & Stiens, J. (2024). Mutant amplitude modulation behavior of MIS-like structure of few-layer graphene/SiO2/p-Si in 500–750 GHz band . Diamond and Related Materials , 150 , [111684].

@article{5fdc853d1a0546109b8917b2155edb96,
title = " Mutant amplitude modulation behavior of MIS-like structure of few-layer graphene/SiO2/p-Si in 500–750 GHz band " ,
abstract = " Graphene has great application potential in the field of electromagnetic modulation field because of its excellent physical and electronic properties. Studies have demonstrated that the properties of graphene films with different layers are also different due to the difference in energy band structure. Nowadays, the modulation mechanism of monolayer graphene (MLG) and bilayer graphene (BLG) has been gradually discovered, but for graphene with more than three layers, the mechanism of whether it is tunable remains to be explored, especially on the proving from an experimental perspective. In this study, the CVD-prepared highly homogeneous few-layer graphene (FLG) film was combined with SiO2 nanolayers and P-doped Si substrate to form an MIS-like capacitor structure, a unique electromagnetic behavior of mutant amplitude modulation exhibited by FLG film was found, which was different from that of mono- and bi-layers of graphene. The results show that the structure exhibits obvious modulation behavior in the ultra wideband frequency of 500–750 GHz and the bias of 0.9 V, up to 3.1 dB. This study makes a new supplement to a gap in the EM modulation system of graphene series material. " ,
keywords = " Vector network analyzer, Millimeter-wave terahertz, Optical modulators, Device measurement, Simulation and modeling " ,
author = " Cheng Chen and Boyuan Gao and Jiaxuan Xue and Zhihao Li and Jixin Wang and Yang Dai and Zhiyong Zhang and Wu Zhao and Johan Stiens " ,
note = " Funding Information: The authors of Vrije Universiteit Brussel (VUB) and Interuniversity Microelectronic Center (IMEC) acknowledge the funding by the SRP-project M3D2 the ETRO-IOF242 project acknowledge the OZR-3251 project (u201CGHz-THz VNA measurement infrastructure: from benchtop to portable instrumentsu201D), which provides a strong economic guarantee for the establishment of the THz-VNA platform. The authors of Northwest University (NWU) acknowledge the funding of Youth Project of Shaanxi Natural Science Foundation ( 2023-JC-QN-0700 ) Visiting Scholar from China Scholarship Council (CSC-202306970038) Postdoctoral Research Project of Shaanxi Province of Cheng Chen. Also, acknowledge for the support of Xi'an New Low-dimensional Materials and Devices and Terahertz Technology International Science and Technology Cooperation Base. Funding Information: The authors of Vrije Universiteit Brussel (VUB) and Interuniversity Microelectronic Center (IMEC) acknowledge the funding by the SRP-project M3D2 the ETRO-IOF242 project acknowledge the OZR-3251 project (u201CGHz-THz VNA measurement infrastructure: from benchtop to portable instrumentsu201D), which provides a strong economic guarantee for the establishment of the THz-VNA platform. The authors of Northwest University (NWU) acknowledge the funding of Youth Project of Shaanxi Natural Science Foundation (2023-JC-QN-0700) Visiting Scholar from China Scholarship Council (202306970038) Postdoctoral Research Project of Shaanxi Province of Cheng Chen. Also, acknowledge for the support of Xi'an New Low-dimensional Materials and Devices and Terahertz Technology International Science and Technology Cooperation Base. Publisher Copyright: { extcopyright} 2024 Elsevier B.V. " ,
year = " 2024 " ,
month = dec,
day = " 1 " ,
doi = " 10.1016/j.diamond.2024.111684 " ,
language = " English " ,
volume = " 150 " ,
journal = " Diamond and Related Materials " ,
issn = " 0925-9635 " ,
publisher = " Elsevier " ,
}