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Hao Yu, Hao Yu, Rana Yasser ElKashlan, Rana Yasser ElKashlan, Meng-Che Tsai, Meng-Che Tsai, Yi Yang, Yi Yang, Mamoun Guenach, Mamoun Guenach, Ying-Chun Kuo, Ying-Chun Kuo, Sachin Yadav, Sachin Yadav, Barry O Sullivan, Barry O Sullivan, Aarti Rathi, Aarti Rathi, Amratansh Gupta, Amratansh Gupta, Dongping Xiao, Dongping Xiao, Claude Desset, Claude Desset, Alireza Alian, Alireza Alian, Uthayasankaran Peralagu, Uthayasankaran Peralagu, Valeri Afanasiev, Valeri Afanasiev, Tian-Li Wu, Tian-Li Wu, Bertrand Parvais, Bertrand Parvais, Nadine Collaert, Nadine Collaert
 

Chapter in Book/ Report/ Conference proceeding

Abstract ■

In this work, we discuss whether a positive gate bias instability (Δ V th) issue hampers a GaN MISHEMT in power amplifier (PA) applications. Two aspects are evaluated: (1) the safe gate modulation range of a GaN MISHEMT that is free of Δ V th, and (2) the gate modulation range of a PA in linear operation. The analysis shows that the two ranges have a significant overlap, meaning that a linearly operating MISHEMT PA can be well designed to avoid the positive Δ V th issue.

Reference ■
 
Yu, H, ElKashlan, R, Tsai, M-C, Yang, Y, Guenach, M, Kuo, Y-C, Yadav, S, Sullivan, BO, Rathi, A, Gupta, A, Xiao, D, Desset, C, Alian, A, Peralagu, U, Afanasiev, V, Wu, T-L, Parvais, B & Collaert, N 2025, Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. in 2025 IEEE International Reliability Physics Symposium (IRPS). 2025 edn, IEEE International Reliability Physics Symposium Proceedings, IEEE, Monterey, CA, USA, pp. 11C.1-1-11C.1-6. https://doi.org/10.1109/IRPS48204.2025.10983812
Yu, H., ElKashlan, R., Tsai, M.-C., Yang, Y., Guenach, M., Kuo, Y.-C., Yadav, S., Sullivan, B. O., Rathi, A., Gupta, A., Xiao, D., Desset, C., Alian, A., Peralagu, U., Afanasiev, V., Wu, T.-L., Parvais, B., & Collaert, N. (2025). Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. In 2025 IEEE International Reliability Physics Symposium (IRPS) (2025 ed., pp. 11C.1-1-11C.1-6). (IEEE International Reliability Physics Symposium Proceedings). IEEE. https://doi.org/10.1109/IRPS48204.2025.10983812
@inproceedings{d6e36f86d8d54866aec4c0b2246df4b1,
title = "Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability",
abstract = "In this work, we discuss whether a positive gate bias instability (Δ V th) issue hampers a GaN MISHEMT in power amplifier (PA) applications. Two aspects are evaluated: (1) the safe gate modulation range of a GaN MISHEMT that is free of Δ V th, and (2) the gate modulation range of a PA in linear operation. The analysis shows that the two ranges have a significant overlap, meaning that a linearly operating MISHEMT PA can be well designed to avoid the positive Δ V th issue.",
keywords = "Gate Reliability, GaN MISHEMT, MISHEMT, gallium nitride (GaN), Power Amplifier (PA), 2DEG, Threshold Voltage Instability, MODFETs, QAM, OFDM, MOCVD, 5G, PAPR",
author = "Hao Yu and Rana ElKashlan and Meng-Che Tsai and Yi Yang and Mamoun Guenach and Ying-Chun Kuo and Sachin Yadav and Sullivan, \{Barry O\} and Aarti Rathi and Amratansh Gupta and Dongping Xiao and Claude Desset and AliReza Alian and Uthayasankaran Peralagu and Valeri Afanasiev and Tian-Li Wu and Bertrand Parvais and Nadine Collaert",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.",
year = "2025",
month = may,
doi = "10.1109/IRPS48204.2025.10983812",
language = "English",
isbn = "9798331504786",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "IEEE",
pages = "11C.1--1--11C.1--6",
booktitle = "2025 IEEE International Reliability Physics Symposium (IRPS)",
edition = "2025",
}