Yang, Y., Yu, H., Tsai, M.-C., Lin, W.-T., Kuo, Y.-C., Sullivan, B. O., Rathi, A., Gupta, A., Yadav, S., Alian, A., Peralagu, U., Parvais, B., Collaert, N., & Wu, T.-L. (2025). Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses. In 2025 IEEE International Reliability Physics Symposium (IRPS) (2025 ed., pp. P73.RF-1-P73.RF-5). (IEEE International Reliability Physics Symposium Proceedings). IEEE. https://doi.org/10.1109/IRPS48204.2025.10983187

@inproceedings{25646e484ac94627ae81211a3b3baa5a,
title = "Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses",
abstract = "This study examines the stability of RF MISHEMTs under ON, SEMI-ON, and OFF-state pulses with insitu SiN thicknesses scaled from 10nm to 1nm, compared to RF Schottky HEMTs. While stability is maintained under ON state pulses, significant degradation is observed under SEMION and OFF-state pulses, particularly in devices with a 1 nm in-situ SiN layer (M1). The high interface trap density (Nit) and inadequate passivation of the M1 sample contribute to the observed current degradation. EDX analysis suggests a rough interface in M1, likely due to non-uniform SiN growth or SiN/Al2O3 intermixing.",
keywords = "GaN-on-Si, in-situ SiN, MISHEMT",
author = "Yi Yang and Hao Yu and Meng-Che Tsai and Wei-Tung Lin and Ying-Chun Kuo and Sullivan, \{Barry O\} and Aarti Rathi and Amratansh Gupta and Sachin Yadav and AliReza Alian and Uthayasankaran Peralagu and Bertrand Parvais and Nadine Collaert and Tian-Li Wu",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.",
year = "2025",
month = may,
doi = "10.1109/IRPS48204.2025.10983187",
language = "English",
isbn = "9798331504786",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "IEEE",
pages = "P73.RF--1--P73.RF--5",
booktitle = "2025 IEEE International Reliability Physics Symposium (IRPS)",
edition = "2025",
}