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Shih-Hsiang Lin, Shih-Hsiang Lin, Marko Simicic, Marko Simicic, Nicolas Pantano, Nicolas Pantano, Shih-Hung Chen, Shih-Hung Chen, Philippe Roussel, Philippe Roussel, Geert Van Der Plas, Geert Van Der Plas, Eric Beyne, Eric Beyne, Piet Wambacq, Piet Wambacq
 

Chapter in Book/ Report/ Conference proceeding

Abstract ■

Three-dimensional (3D) die-stacking has become a promising way to continue improving the integrated circuits performance. However, the risk of electrostatic discharge (ESD) during the stacking process is not yet fully understood. In this paper, we focus on understanding the electrostatics before the contact moment for the 3D stacking process. Our findings indicate that the stacking process presents a relatively low risk of ESD.

Reference ■
 
Lin, S-H, Simicic, M, Pantano, N, Chen, S-H, Roussel, P, Van Der Plas, G, Beyne, E & Wambacq, P 2023, ESD mitigation for 3D IC hybrid bonding. in 2023 45th Annual EOS/ESD Symposium (EOS/ESD). Electrical Overstress/Electrostatic Discharge Symposium Proceedings, vol. 2023-October, IEEE, Riverside, CA, USA, pp. 1-9, 2023 45th Annual EOS/ESD Symposium (EOS/ESD), California, United States, 2/10/23. https://doi.org/10.23919/EOS/ESD58195.2023.10287746
Lin, S.-H., Simicic, M., Pantano, N., Chen, S.-H., Roussel, P., Van Der Plas, G., Beyne, E., & Wambacq, P. (2023). ESD mitigation for 3D IC hybrid bonding. In 2023 45th Annual EOS/ESD Symposium (EOS/ESD) (pp. 1-9). (Electrical Overstress/Electrostatic Discharge Symposium Proceedings; Vol. 2023-October). IEEE. https://doi.org/10.23919/EOS/ESD58195.2023.10287746
@inproceedings{b0a58399967b44ffac1e8506c2300028,
title = "ESD mitigation for 3D IC hybrid bonding",
abstract = "Three-dimensional (3D) die-stacking has become a promising way to continue improving the integrated circuits performance. However, the risk of electrostatic discharge (ESD) during the stacking process is not yet fully understood. In this paper, we focus on understanding the electrostatics before the contact moment for the 3D stacking process. Our findings indicate that the stacking process presents a relatively low risk of ESD.",
author = "Shih-Hsiang Lin and Marko Simicic and Nicolas Pantano and Shih-Hung Chen and Philippe Roussel and \{Van Der Plas\}, Geert and Eric Beyne and Piet Wambacq",
note = "Publisher Copyright: {\textcopyright} 2023 ESD Association. All rights reserved.; 2023 45th Annual EOS/ESD Symposium (EOS/ESD) ; Conference date: 02-10-2023 Through 04-10-2023",
year = "2023",
month = oct,
doi = "10.23919/EOS/ESD58195.2023.10287746",
language = "English",
isbn = "979-8-3503-2086-2",
series = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings",
publisher = "IEEE",
pages = "1--9",
booktitle = "2023 45th Annual EOS/ESD Symposium (EOS/ESD)",
url = "https://ieeexplore.ieee.org/xpl/conhome/10287717/proceeding?isnumber=10287664\&sortType=vol-only-seq\&pageNumber=1",
}