Yu, H., Parvais, B., Peralagu, U., Elkashlan, R. Y., Rodriguez, R., Khaled, A., Yadav, S., Alian, A., Zhao, M., De Almeida Braga, N., Cobb, J., Fang, J., Cardinael, P., Sibaja-Hernandez, A., & Collaert, N. (2022). Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions. In 2022 International Electron Devices Meeting, IEDM 2022 (pp. 3061-3064). (2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019489

@inproceedings{548b9342dabc4d35a3ebc39bc18ab3f4,
title = "Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions",
abstract = "Trapping in an impurity (e.g. Fe, C) doped back barrier (BB) causes pronounced on-resistance (Ron) dispersion of GaN HEMTs. We demonstrate that the BB trapping is alleviated by increasing 2DEG density Nsh in the GaN channel (50% increased Nsh results in 30% less Delta mathrm{R} -{on}) and inserting an additional intrinsic AlGaN BB (100 nm AlGaN with 50% less Delta mathrm{R} -{on}). We propose a novel flat-AlGaN-BB-energy-band designing criterion for the AlGaN/C-GaN BB combination. ",
author = "Hao Yu and B. Parvais and U. Peralagu and Elkashlan, {R. Y.} and R. Rodriguez and A. Khaled and S. Yadav and A. Alian and M. Zhao and {De Almeida Braga}, N. and J. Cobb and J. Fang and P. Cardinael and A. Sibaja-Hernandez and Nadine Collaert",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE. Copyright: Copyright 2023 Elsevier B.V., All rights reserved.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",
year = "2022",
doi = "10.1109/IEDM45625.2022.10019489",
language = "English",
series = "2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3061--3064",
booktitle = "2022 International Electron Devices Meeting, IEDM 2022",
address = "United States",
}