Glória Caño de Andrade, M., Felipe de Oliveira Bergamim, L., Baptista Júnior, B., Roberto Nogueira, C., Alex da Silva, F., Takakura, K., Parvais, B., & Simoen, E. (2021). Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors. Solid-State Electronics, 183, Article 108050. https://doi.org/10.1016/j.sse.2021.108050

@article{d8354b9132634cdcadd125b571a334bb,
title = "Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors",
abstract = "In this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (VD = 50 mV) for different channel lengths (L) and widths (W) at different temperatures (5.32 °C till 100 °C). The origin of the noise will be analyzed to understand the physical mechanisms involved. It is shown that the Low-Frequency (LF) noise is dominated by 1/f noise, originating from number fluctuations. Additionally, in shorter devices, a higher 1/f noise PSD is found. The LF noise characteristics indicate that the AlGaN/GaN HEMTs on silicon substrates can be a promising candidate for analog and Radio Frequency applications (RF).",
keywords = "GaN/AlGaN, HEMT, High-temperature, Low-frequency noise",
author = "\{Gl{\'o}ria Ca{\~n}o de Andrade\}, Maria and \{Felipe de Oliveira Bergamim\}, Luis and \{Baptista J{\'u}nior\}, Braz and \{Roberto Nogueira\}, Carlos and \{Alex da Silva\}, F{\'a}bio and Kenichiro Takakura and Bertrand Parvais and Eddy Simoen",
year = "2021",
month = sep,
doi = "10.1016/j.sse.2021.108050",
language = "English",
volume = "183",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier",
}