We extract an AlGaN surface state spectrum with a density ( \$\{D\}\_\{\textbackslash{}text\{SS\}\}\$ ) ranging between \$1.4\textbackslash{}times10\$ 12 and \$4.7\textbackslash{}times10\$ 12 eV-1cm-2. The low \$\{D\}\_\{\textbackslash{}text\{SS\}\}\$ is achieved with in situ SiN passivation. \$\{D\}\_\{\textbackslash{}text\{SS\}\}\$ is extracted from ungated AlGaN/AlN/GaN heterostructures with varied AlN thicknesses between 0 and 2 nm: increased AlN thicknesses in heterostructures monotonously increase two-dimensional electron gas (2DEG) densities \$\{N\}\_\{\textbackslash{}text\{sh\}\}\$ and AlGaN surface potential energies \$\{q\} \{\textbackslash{}varphi \} \_\{\textbackslash{}text\{s\}\}\$ , and \$\{D\}\_\{\textbackslash{}text\{SS\}\}\$ is extracted with \$\textbackslash{}boldsymbol \{\textbackslash{}Delta \} \{N\}\_\{\textbackslash{}text\{sh\}\}\$ - \$\textbackslash{}boldsymbol \{\textbackslash{}Delta \} \{\textbackslash{}varphi \}\_\{\textbackslash{}text\{s\}\}\$ correlations. The \$\{D\}\_\{\textbackslash{}text\{SS\}\}\$ extraction methodology in this work features calibrated polarization charge values, Hartree approximation-based 2DEG profile calculation, and incorporated C-doped GaN (C-GaN) substrate impact on 2DEG. We also extract the charge neutrality level at the AlGaN surface, which is 0.95 eV below conduction band minimum.
Yu, H, Alian, A, Peralagu, U, Zhao, M, Waldron, N, Parvais, B & Collaert, N 2021, 'Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics', IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 68, no. 11, pp. 5559-5564. https://doi.org/10.1109/TED.2021.3115086
Yu, H., Alian, A., Peralagu, U., Zhao, M., Waldron, N., Parvais, B., & Collaert, N. (2021). Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(11), 5559-5564. https://doi.org/10.1109/TED.2021.3115086
@article{f990e1ed49e746ec887f23d1c331c5eb,
title = "Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics",
abstract = "We extract an AlGaN surface state spectrum with a density ( \$\{D\}\_\{\textbackslash{}text\{SS\}\}\$ ) ranging between \$1.4\textbackslash{}times10\$ 12 and \$4.7\textbackslash{}times10\$ 12 eV-1cm-2. The low \$\{D\}\_\{\textbackslash{}text\{SS\}\}\$ is achieved with in situ SiN passivation. \$\{D\}\_\{\textbackslash{}text\{SS\}\}\$ is extracted from ungated AlGaN/AlN/GaN heterostructures with varied AlN thicknesses between 0 and 2 nm: increased AlN thicknesses in heterostructures monotonously increase two-dimensional electron gas (2DEG) densities \$\{N\}\_\{\textbackslash{}text\{sh\}\}\$ and AlGaN surface potential energies \$\{q\} \{\textbackslash{}varphi \} \_\{\textbackslash{}text\{s\}\}\$ , and \$\{D\}\_\{\textbackslash{}text\{SS\}\}\$ is extracted with \$\textbackslash{}boldsymbol \{\textbackslash{}Delta \} \{N\}\_\{\textbackslash{}text\{sh\}\}\$ - \$\textbackslash{}boldsymbol \{\textbackslash{}Delta \} \{\textbackslash{}varphi \}\_\{\textbackslash{}text\{s\}\}\$ correlations. The \$\{D\}\_\{\textbackslash{}text\{SS\}\}\$ extraction methodology in this work features calibrated polarization charge values, Hartree approximation-based 2DEG profile calculation, and incorporated C-doped GaN (C-GaN) substrate impact on 2DEG. We also extract the charge neutrality level at the AlGaN surface, which is 0.95 eV below conduction band minimum.",
author = "Hao Yu and Alireza Alian and Uthayasankaran Peralagu and Ming Zhao and Niamh Waldron and Bertrand Parvais and Nadine Collaert",
note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2021",
month = nov,
doi = "10.1109/TED.2021.3115086",
language = "English",
volume = "68",
pages = "5559--5564",
journal = "IEEE TRANSACTIONS ON ELECTRON DEVICES",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}