Publication Details
Overview
 
 
K. Kaczmarek, K Kaczmarek, K Kaczmarek, K. Kaczmarek, M. Garcia Bardon, Marie Garcia Bardon, Marie Garcia Bardon, M. Garcia Bardon, Yang Xiang, Y. Xiang, Yang Xiang, Y. Xiang, L. Breuil, Laurent Breuil, L. Breuil, Laurent Breuil, Nicolo Ronchi, N. Ronchi, Nicolo Ronchi, N. Ronchi, Bertrand Parvais, Bertrand Parvais, Bertrand Parvais, Bertrand Parvais, Guido Groeseneken, G. Groeseneken, G. Groeseneken, Guido Groeseneken, J. Van Houdt, J. Van Houdt, Jan Van Houdt, Jan Van Houdt
 

Chapter in Book/ Report/ Conference proceeding

Abstract ■

We present a physics-based prediction of the progressive VTH shift on fabricated Si:HfO2-FeFETs during Incremental Step Pulse Programming, with the help of our in-house, hardware-validated FeFET compact model. Our study confirms that the depolarization field across the FE layer strongly constrains the retained polarization in the gate stack after the programming waveform stops, which constitutes a fundamental, self-limiting effect on the attainable memory window in multidomain FeFETs. An extensive sensitivity study based on the model suggests that for a 9.5 nm-thick FE layer, decreasing the mean negative coercive field from -1.0 MV/cm to -1.5 MV/cm improves the MW from 0.75 V to 1.07 V, thus effectively alleviating detrimental impact of the depolarization field.

Reference ■
 
Kaczmarek, K, Garcia Bardon, M, Xiang, Y, Breuil, L, Ronchi, N, Parvais, B, Groeseneken, G & Van Houdt, J 2021, Understanding the memory window in 1T-FeFET memories: A depolarization field perspective. in 2021 IEEE International Memory Workshop, IMW ., 9439597, IEEE International Memory Workshop, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 40-43, 2021 IEEE International Memory Workshop, IMW 2021, Dresden, Germany, 16/05/21. https://doi.org/10.1109/IMW51353.2021.9439597
Kaczmarek, K., Garcia Bardon, M., Xiang, Y., Breuil, L., Ronchi, N., Parvais, B., Groeseneken, G., & Van Houdt, J. (2021). Understanding the memory window in 1T-FeFET memories: A depolarization field perspective. In 2021 IEEE International Memory Workshop, IMW (pp. 40-43). Article 9439597 (IEEE International Memory Workshop, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMW51353.2021.9439597
@inproceedings{0cefb88c04fa4304bafdffca4e9fa816,
title = "Understanding the memory window in 1T-FeFET memories: A depolarization field perspective",
abstract = "We present a physics-based prediction of the progressive VTH shift on fabricated Si:HfO2-FeFETs during Incremental Step Pulse Programming, with the help of our in-house, hardware-validated FeFET compact model. Our study confirms that the depolarization field across the FE layer strongly constrains the retained polarization in the gate stack after the programming waveform stops, which constitutes a fundamental, self-limiting effect on the attainable memory window in multidomain FeFETs. An extensive sensitivity study based on the model suggests that for a 9.5 nm-thick FE layer, decreasing the mean negative coercive field from -1.0 MV/cm to -1.5 MV/cm improves the MW from 0.75 V to 1.07 V, thus effectively alleviating detrimental impact of the depolarization field. ",
keywords = "depolarization field, doped hafnia, FeFET, memory window",
author = "K Kaczmarek and \{Garcia Bardon\}, Marie and Yang Xiang and Laurent Breuil and Nicolo Ronchi and Bertrand Parvais and Guido Groeseneken and \{Van Houdt\}, Jan",
year = "2021",
month = may,
doi = "10.1109/IMW51353.2021.9439597",
language = "English",
isbn = "9781728185187",
series = "IEEE International Memory Workshop, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "40--43",
booktitle = "2021 IEEE International Memory Workshop, IMW",
address = "United States",
note = "2021 IEEE International Memory Workshop, IMW 2021 ; Conference date: 16-05-2021 Through 19-05-2021",
}