Publication Details
Overview
 
 
Akshay Visweswaran, Alexander Haag, Carmine de Martino, Karina Schneider, Tim Maiwald, Bastien Vignon, Klaus Aufinger, Marco Spirito, Thomas Zwick, Piet Wambacq
 

Chapter in Book/ Report/ Conference proceeding

Abstract 

We present a 132-147GHz power source based on four power amplifiers whose outputs are combined into a compact (0.52x0.48mm2 footprint) dielectric resonator antenna mounted on the chip face. The source, prototyped in 0.13μm SiGe BiCMOS, demonstrates an EIRP of 27dBm with a power-added efficiency of 13.8 %. Individual PAs deliver a peak Psat of 15dBm over a 3-dB bandwidth of 116-152GHz. Excited by shorted patches on chip, the maximum efficiency of the hybrid antenna is 80% over a 16% relative bandwidth. The EIRP and transmitted RF power are the highest reported for D-band silicon-based transmitters.

Reference