Park, D-W, Radityo Utomo, D, Hong, J-P, Vaesen, K, Wambacq, P & Lee, S-G 2020, A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G(max) Gain Boosting Technique. in Proceedings of the 2020 IEEE Symposium on VLSI Circuits. IEEE, pp. 1-2, 2020 IEEE Symposium on VLSI Circuits, 14/06/20.
Park, D.-W., Radityo Utomo, D., Hong, J.-P., Vaesen, K., Wambacq, P., & Lee, S.-G. (2020). A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G(max) Gain Boosting Technique. In Proceedings of the 2020 IEEE Symposium on VLSI Circuits (pp. 1-2). IEEE.
@inproceedings{6b7f33e005ff45d4919a6bf0cc05e249,
title = "A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G(max) Gain Boosting Technique",
author = "Dae-Woong Park and {Radityo Utomo}, Dzuhri and Jong-Phil Hong and Kristof Vaesen and Piet Wambacq and Sang-Gug Lee",
year = "2020",
language = "English",
pages = "1--2",
booktitle = "Proceedings of the 2020 IEEE Symposium on VLSI Circuits",
publisher = "IEEE",
note = "2020 IEEE Symposium on VLSI Circuits ; Conference date: 14-06-2020 Through 19-06-2020",
}