As CMOS scales down and grows more expensive, area-aware RF front-end design becomes appropriate. A wideband front-end is presented that uses an inductorless LNA and downconversion section up to 6 GHz. Frequency synthesis is realized using a single-inductor dual-band 3.5 and -10 GHz VCO. In-depth analysis describes the operation of the 4-port oscillator, and compares phase noise to that of a classical VCO. The front-end is realized in 90 run digital CMOS. The LNA achieves a noise figure of 2.7 dB with an average IIP3 of -2 dBm. The dual-band VCO achieves a phase noise of -122 dBc/Hz and -128 dBc/Hz at 3.9 GHz and 10 GHz, respectively, at 2.5 MHz offset. Both circuits are embedded in a wideband direct-conversion front-end consuming less than 60 mW from a 1.2 V supply
Borremans, J, Bevilacqua, A, Bronckers, S, Dehan, M, Kuijk, M, Wambacq, P & Craninckx, J 2008, 'A Compact Wideband Front-End Using a Single-Inductor Dual-Band VCO in 90 nm Digital CMOS', IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 43, no. 12, pp. 2693-2705.
Borremans, J., Bevilacqua, A., Bronckers, S., Dehan, M., Kuijk, M., Wambacq, P., & Craninckx, J. (2008). A Compact Wideband Front-End Using a Single-Inductor Dual-Band VCO in 90 nm Digital CMOS. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 43(12), 2693-2705.
@article{2c3d48dc09934334ad56f790d97020f4,
title = "A Compact Wideband Front-End Using a Single-Inductor Dual-Band VCO in 90 nm Digital CMOS",
abstract = "As CMOS scales down and grows more expensive, area-aware RF front-end design becomes appropriate. A wideband front-end is presented that uses an inductorless LNA and downconversion section up to 6 GHz. Frequency synthesis is realized using a single-inductor dual-band 3.5 and -10 GHz VCO. In-depth analysis describes the operation of the 4-port oscillator, and compares phase noise to that of a classical VCO. The front-end is realized in 90 run digital CMOS. The LNA achieves a noise figure of 2.7 dB with an average IIP3 of -2 dBm. The dual-band VCO achieves a phase noise of -122 dBc/Hz and -128 dBc/Hz at 3.9 GHz and 10 GHz, respectively, at 2.5 MHz offset. Both circuits are embedded in a wideband direct-conversion front-end consuming less than 60 mW from a 1.2 V supply",
keywords = "voltage-controlled amplifier, wideband, low-noise amplifier",
author = "Jonathan Borremans and Andrea Bevilacqua and Stephane Bronckers and M. Dehan and Maarten Kuijk and Piet Wambacq and J. Craninckx",
year = "2008",
month = dec,
day = "1",
language = "English",
volume = "43",
pages = "2693--2705",
journal = "IEEE JOURNAL OF SOLID-STATE CIRCUITS",
issn = "0018-9200",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}