Raskin, J. P., Pailloncy, G., Lederer, D., Danneville, F., Dambrine, G., Decoutere, S., Mercha, A., & Parvais, B. (2008). High-frequency noise performance of 60-nm gate-length FinFETs. IEEE Transactions on Electron Devices, 55(10), 2718-2727. https://doi.org/10.1109/TED.2008.2003097

@article{bbde0c6201ee4be0a57e7d28acf9c095,
title = "High-frequency noise performance of 60-nm gate-length FinFETs",
abstract = "In this paper, the first-ever published investigation on radio-frequency (RF) noise performance of FinFETs is reported. The impact of the geometrical dimensions of FinFETs on RF noise parameters such as the channel length, the fin width, as well as the fin number is analyzed. A minimum noise figure of 1.35 dB is obtained with an associated available gain of 13.5 dB at 10 GHz for Vdd = 0.5 V. This result is quite encouraging to bring solutions for future low-power RF systems.",
keywords = "FinFETs, High-frequency noise, Microwave characterization, S-parameters, Small-signal modeling",
author = "Raskin, {Jean Pierre} and Guillaume Pailloncy and Dimitri Lederer and Fran{\c c}ois Danneville and Gilles Dambrine and Stefaan Decoutere and Abdelkarim Mercha and Bertrand Parvais",
year = "2008",
month = oct,
day = "16",
doi = "10.1109/TED.2008.2003097",
language = "English",
volume = "55",
pages = "2718--2727",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",
}