Design and validation of an ESD protected ultra-wideband low noise amplifier is presented in this paper. It features an interstage matching network for gain roll-off compensation to achieve a flat gain over its passband. Evaluated with a chip-on-board approach, the amplifier demonstrates a gain of 11.8 ± 0.3 dB, minimum noise figure (NF) of 2.1 dB, and a group delay variation of ±30 ps from 3 to 5 GHz, even though using a less advanced 0.35-micron BiCMOS technology. Its input, output and power supply are all protected against HBM ESD stress up to 6.5 kV. Measured IIP3 at 4.5 GHz is -5.5 dBm. The core LNA draws 3 mA from a 3-V supply
Liu, M, Craninckx, J, Iyer, NM, Kuijk, M & Barel, A 2005, A 6.5-kV ESD protected 3-5-GHz ultra-wideband BiCMOS low noise amplifier using interstage gain roll-off compensation. in 2005 IEEE International Conference on Ultra-Wideband. IEEE, pp. 525-529, Finds and Results from the Swedish Cyprus Expedition: A Gender Perspective at the Medelhavsmuseet, Stockholm, Sweden, 21/09/09.
Liu, M., Craninckx, J., Iyer, N. M., Kuijk, M., & Barel, A. (2005). A 6.5-kV ESD protected 3-5-GHz ultra-wideband BiCMOS low noise amplifier using interstage gain roll-off compensation. In 2005 IEEE International Conference on Ultra-Wideband (pp. 525-529). IEEE.
@inproceedings{ee80bd7f32bc48c28fae1398dbb994b3,
title = "A 6.5-kV ESD protected 3-5-GHz ultra-wideband BiCMOS low noise amplifier using interstage gain roll-off compensation",
abstract = "Design and validation of an ESD protected ultra-wideband low noise amplifier is presented in this paper. It features an interstage matching network for gain roll-off compensation to achieve a flat gain over its passband. Evaluated with a chip-on-board approach, the amplifier demonstrates a gain of 11.8 ± 0.3 dB, minimum noise figure (NF) of 2.1 dB, and a group delay variation of ±30 ps from 3 to 5 GHz, even though using a less advanced 0.35-micron BiCMOS technology. Its input, output and power supply are all protected against HBM ESD stress up to 6.5 kV. Measured IIP3 at 4.5 GHz is -5.5 dBm. The core LNA draws 3 mA from a 3-V supply",
keywords = "low noise amplifiers, MMIC amplifiers, ultra wideband technology",
author = "Mingxu Liu and J. Craninckx and N.m. Iyer and Maarten Kuijk and Alain Barel",
year = "2005",
month = sep,
day = "5",
language = "English",
isbn = "0-7803-9397-X",
pages = "525--529",
booktitle = "2005 IEEE International Conference on Ultra-Wideband",
publisher = "IEEE",
note = "Finds and Results from the Swedish Cyprus Expedition: A Gender Perspective at the Medelhavsmuseet ; Conference date: 21-09-2009 Through 25-09-2009",
}