Parvais, B., Alian, A., Peralagu, U., Rodriguez, R., Yadav, S., Khaled, A., Elkashlan, R. Y., Putcha, V., Sibaja-Hernandez, A., Zhao, M., Wambacq, P., Collaert, N., & Waldron, N. (2020). GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL. In 2020 IEEE International Electron Devices Meeting, IEDM 2020 (pp. 8.1.1-8.1.4). Article 9372056 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM13553.2020.9372056

@inproceedings{3fec8ccfdfd547bd8b107ecaf166404f,
title = "GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL",
abstract = "We report on the development of mm-wave GaN-on-Si AlGaN HEMTs integrated with a 3 level Cu damascene BEOL flow on 200mm Si <111> wafers. Optimizations of the gate metal stack, contact resistance and gate length scaling to 110nm result in devices with a peak gm of 430 mS/mm and an fMAX of 135 GHz. While wafer warp was found to increase slightly through the processing of 3 levels of 1μm thick Cu metal, no significant deterioration was observed between devices measured at Metal 1 and Metal 3.",
author = "B. Parvais and A. Alian and Uthayasankaran Peralagu and Raul Rodriguez and Sachin Yadav and A. Khaled and Elkashlan, \{R. Y.\} and V. Putcha and A. Sibaja-Hernandez and M. Zhao and P. Wambacq and Nadine Collaert and N. Waldron",
year = "2020",
month = dec,
day = "12",
doi = "10.1109/IEDM13553.2020.9372056",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "8.1.1--8.1.4",
booktitle = "2020 IEEE International Electron Devices Meeting, IEDM 2020",
address = "United States",
note = "66th Annual IEEE International Electron Devices Meeting, IEDM 2020 ; Conference date: 12-12-2020 Through 18-12-2020",
}