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2024
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Hemelhof, A, Park, S, Zhang, Y, Ingels, M, Gramegna, G, Vaesen, K, Yan, D & Wambacq, P 2024, A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm P
sat
and 24.3 % PAE in a 250-nm InP HBT Technology. in
2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024.
2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024, Institute of Electrical and Electronics Engineers Inc., pp. 185-188, 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024, Fort Lauderdale, United States, 27/10/24. https://doi.org/10.1109/BCICTS59662.2024.10745714
2019
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Yan, D, Ingels, M, Mangraviti, G, Liu, Y, Parvais, B, Waldron, N, Collaert, N & Wambacq, P 2019, Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mmwave applications. in
17th IEEE International New Circuits and Systems Conference, NEWCAS 2019.
, 8961233, 17th IEEE International New Circuits and Systems Conference, NEWCAS 2019, Institute of Electrical and Electronics Engineers Inc., 17th IEEE International New Circuits and Systems Conference, NEWCAS 2019, Munich, Germany, 23/06/19. https://doi.org/10.1109/NEWCAS44328.2019.8961233