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Publication 24 Background

A CMOS compatible III-v-on-300 mm SI technology for future high-speed communi...

Publication 32 Background

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si s...

Publication 33 Background

An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF App...

Publication 1909 Background

Experimental study of MISHEMT from 450 K down to 200 K for analog application...

Publication 1913 Background

From FinFET to Nanosheets and Beyond

Publication 2010 Background

DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm ...

Publication 2013 Background

Defect engineering for monolithic integration of III-V semiconductors on sili...

Publication 2185 Background

Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor ...

Publication 2081 Background

3D sequential low temperature top tier devices using dopant activation with e...

Publication 2079 Background

(Invited) Advanced Transistors for High Frequency Applications

Publication 2323 Background

First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge en...

Publication 2296 Background

Design of a 28 GHz differential GaAs power amplifier with capacitive neutrali...