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Publication 24 Background

A CMOS compatible III-v-on-300 mm SI technology for future high-speed communi...

Publication 32 Background

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si s...

Publication 33 Background

An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF App...

Publication 1909 Background

Experimental study of MISHEMT from 450 K down to 200 K for analog application...

Publication 1913 Background

From FinFET to Nanosheets and Beyond

Publication 480 Background

Parasitic side channel formation due to ion implantation isolation of GaN HEM...

Publication 510 Background

Time Dependence of RF Losses in GaN-on-Si Substrates

Publication 506 Background

Thermal budget increased alloy disorder scattering of 2DEG in III-N heterostr...

Publication 2010 Background

DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm ...

Publication 2013 Background

Defect engineering for monolithic integration of III-V semiconductors on sili...

Publication 2157 Background

GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu...

Publication 2188 Background

Materials and Defect Aspects of III-V and III-N Devices for High-Speed Analog...