A CMOS compatible III-v-on-300 mm SI technology for future high-speed communication systems: Challenges and possibilities
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An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications
Kumar, A, Yadav, S, Vais, A, Boccardi, G, Mols, Y, Alcotte, R, Parvais, B, Kunert, B & Collaert, N 2024, An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications. in 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024. IEEE MTT-S International Microwave Symposium Digest, Institute of Electrical and Electronics Engineers Inc., pp. 940-943, 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024, Washington, United States, 16/06/24. https://doi.org/10.1109/IMS40175.2024.10600299
First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering
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Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mmwave applications
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Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling
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Junctionless gate-All-Around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells
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