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2024 ■
Vais, A, Kumar, A, Boccardi, G, Yadav, S, Mols, Y, Alcotte, R, Vermeersch, B, Ingels, M, Peralagu, U, Neve, CR, Ghyselen, B, Parvais, B, Wambacq, P, Kunert, B & Collaert, N 2024, A CMOS compatible III-v-on-300 mm SI technology for future high-speed communication systems: Challenges and possibilities. in Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications. River Publishers, pp. 27-40.
Cardinael, P, Yadav, S, Hahn, H, Zhao, M, Banerjee, S, Esfeh, BK, Mauder, C, Sullivan, BO, Peralagu, U, Vohra, A, Langer, R, Collaert, N, Parvais, B & Raskin, J-P 2024 'AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates'.
Kumar, A, Yadav, S, Vais, A, Boccardi, G, Mols, Y, Alcotte, R, Parvais, B, Kunert, B & Collaert, N 2024, An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications. in 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024. IEEE MTT-S International Microwave Symposium Digest, Institute of Electrical and Electronics Engineers Inc., pp. 940-943, 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024, Washington, United States, 16/06/24. https://doi.org/10.1109/IMS40175.2024.10600299
 
2019 ■
Vais, A, Alcotte, R, Ingels, M, Wambacq, P, Parvais, B, Langer, R, Kunert, B, Waldron, N, Collaert, N, Witters, L, Mols, Y, Hernandez, AS, Walke, A, Yu, H, Baryshnikova, M, Mannaert, G & Deshpande, V 2019, First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering. in 2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993539, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., pp. 178-181, 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 7/12/19. https://doi.org/10.1109/IEDM19573.2019.8993539
Yan, D, Ingels, M, Mangraviti, G, Liu, Y, Parvais, B, Waldron, N, Collaert, N & Wambacq, P 2019, Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mmwave applications. in 17th IEEE International New Circuits and Systems Conference, NEWCAS 2019., 8961233, 17th IEEE International New Circuits and Systems Conference, NEWCAS 2019, Institute of Electrical and Electronics Engineers Inc., 17th IEEE International New Circuits and Systems Conference, NEWCAS 2019, Munich, Germany, 23/06/19. https://doi.org/10.1109/NEWCAS44328.2019.8961233
 
2018 ■
Vandooren, A, Witters, L, Franco, J, Mallik, A, Parvais, B, Wu, Z, Walke, A, Deshpande, V, Rosseel, E, Hikavyy, A, Li, W, Peng, L, Rassoul, N, Jamieson, G, Inoue, F, Verbinnen, G, Devriendt, K, Teugels, L, Heylen, N, Vecchio, E, Zheng, T, Waldron, N, De Heyn, V, Mocuta, D & Collaert, N 2018, Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling. in ICICDT 2018 - International Conference on IC Design and Technology, Proceedings. ICICDT 2018 - International Conference on IC Design and Technology, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 145-148, 2018 International Conference on IC Design and Technology, ICICDT 2018, Otranto, Italy, 4/06/18. https://doi.org/10.1109/ICICDT.2018.8399777
 
 ■
Veloso, A, Parvais, B, Matagne, P, Simoen, E, Huynh-Bao, T, Paraschiv, V, Vecchio, E, Devriendt, K, Rosseel, E, Ercken, M, Chan, BT, Delvaux, C, Altamirano-Sanchez, E, Versluijs, JJ, Tao, Z, Suhard, S, Brus, S, Sibaja-Hernandez, A, Waldron, N, Lagrain, P, Richard, O, Bender, H, Chasin, A, Kaczer, B, Ivanov, T, Ramesh, S, De Meyer, K, Ryckaert, J, Collaert, N & Thean, A 2016, Junctionless gate-All-Around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells. in 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016., 7573409, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2016-September, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016, Honolulu, United States, 13/06/16. https://doi.org/10.1109/VLSIT.2016.7573409