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2024 ■
Banerjee, S, Peralagu, U, Alian, A, Zhao, M, Hahn, H, Minj, A, Vanhove, B, Vohra, A, Parvais, B, Langer, R & Collaert, N 2024, 'Metal-Organic Chemical Vapor Deposition Regrowth of Highly Doped n+ (In)GaN Source/Drain Layers for Radio Frequency Transistors', Physica Status Solidi (A) Applications and Materials Science, vol. 221, no. 21, 2400069. https://doi.org/10.1002/pssa.202400069
Vais, A, Kumar, A, Boccardi, G, Yadav, S, Mols, Y, Alcotte, R, Vermeersch, B, Ingels, M, Peralagu, U, Neve, CR, Ghyselen, B, Parvais, B, Wambacq, P, Kunert, B & Collaert, N 2024, A CMOS compatible III-v-on-300 mm SI technology for future high-speed communication systems: Challenges and possibilities. in Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications. River Publishers, pp. 27-40.
O'Sullivan, B, Rathi, A, Alian, A, Yadav, S, Yu, H, Sibaja-Hernandez, A, Peralagu, U, Parvais, B, Chasin, A & Collaert, N 2024, 'Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers', Micromachines, vol. 15, no. 8, 951. https://doi.org/10.3390/mi15080951
Cardinael, P, Yadav, S, Hahn, H, Zhao, M, Banerjee, S, Esfeh, BK, Mauder, C, Sullivan, BO, Peralagu, U, Vohra, A, Langer, R, Collaert, N, Parvais, B & Raskin, J-P 2024 'AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates'.
Collaert, N 2024, Heterojunction bipolar transistors for sub-THz applications. in New Materials and Devices Enabling 5G Applications and Beyond. Elsevier, pp. 139-178. https://doi.org/10.1016/B978-0-12-822823-4.00005-4
Perina, WF, Martino, JA, Simoen, E, Peralagu, U, Collaert, N & Agopian, PGD 2024, 'Effect of multiple conductions on basic parameters in linear and saturation regions for a MIS-HEMT from 450 K down to 200 K', Journal of Integrated Circuits and Systems, vol. 19, no. 2. https://doi.org/10.29292/jics.v19i2.812
Elkashlan, R, Yadav, S, Khaled, A, Xiao, D, Kazemi, B, Yu, H, Alian, AR, Peralagu, U, Collaert, N & Parvais, B 2024, Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE > 62% at 28 GHz. in 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024. IEEE MTT-S International Microwave Symposium Digest, Institute of Electrical and Electronics Engineers Inc., pp. 948-951, 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024, Washington, United States, 16/06/24. https://doi.org/10.1109/IMS40175.2024.10600314, https://doi.org/10.1109/IMS40175.2024.10600314
O'Sullivan, BJ, Alian, A, Sibaja-Hernandez, A, Franco, J, Yadav, S, Yu, H, Rathi, A, Peralagu, U, Chasin, A, Parvais, B & Collaert, N 2024, DC Reliability Study of high-? GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. in 2024 IEEE International Reliability Physics Symposium, IRPS 2024 - Proceedings. IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 2024 IEEE International Reliability Physics Symposium, IRPS 2024, Grapevine, United States, 14/04/24. https://doi.org/10.1109/IRPS48228.2024.10529379
Kumar, A, Yadav, S, Vais, A, Boccardi, G, Mols, Y, Alcotte, R, Parvais, B, Kunert, B & Collaert, N 2024, An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications. in 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024. IEEE MTT-S International Microwave Symposium Digest, Institute of Electrical and Electronics Engineers Inc., pp. 940-943, 2024 IEEE/MTT-S International Microwave Symposium, IMS 2024, Washington, United States, 16/06/24. https://doi.org/10.1109/IMS40175.2024.10600299
 
2023 ■
Perina, WF, Martino, JA, Simoen, E, Peralagu, U, Collaert, N & Agopian, PGD 2023, 'Experimental study of MISHEMT from 450 K down to 200 K for analog applications', Solid-State Electronics, vol. 208, 108742. https://doi.org/10.1016/j.sse.2023.108742
Collaert, N 2023, From FinFET to Nanosheets and Beyond. in Springer Handbooks. Springer Handbooks, pp. 259-278. https://doi.org/10.1007/978-3-030-79827-7_7
Collaert, N 2023, Advancements in IC Technologies: A look toward the future.. https://doi.org/10.1109/MSSC.2023.3280433
 
2022 ■
Yu, H, Schaekers, M, Everaert, JL, Horiguchi, N, De Meyer, K & Collaert, N 2022, 'A snapshot review on metal–semiconductor contact exploration for 7-nm CMOS technology and beyond', MRS Advances, vol. 7, no. 36, pp. 1369-1379. https://doi.org/10.1557/s43580-022-00404-1
 
2021 ■
Yadav, S, Vais, A, Elkashlan, RY, Witters, L, Vondkar, K, Mols, Y, Walke, A, Yu, H, Alcotte, R, Ingels, M, Wambacq, P, Langer, R, Kunert, B, Waldron, N, Parvais, B & Collaert, N 2021, DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates. in EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference., 9337489, EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference, Institute of Electrical and Electronics Engineers Inc., pp. 89-92, 15th European Microwave Integrated Circuits Conference, EuMIC 2020, Utrecht, Netherlands, 11/01/21.
Simoen, E, Hsu, PC, Takakura, K, Syshchyk, O, Vais, A, Yu, H, Parvais, B, Collaert, N & Claeys, C 2021, Defect engineering for monolithic integration of III-V semiconductors on silicon substrates. in E Simoen, O Kononchuk, O Nakatsuka & C Claeys (eds), 239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - High Purity and High Mobility Semiconductors 16. 4 edn, ECS Transactions, no. 4, vol. 102, IOP Publishing Ltd., pp. 53-62, 239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021, Chicago, United States, 30/05/21. https://doi.org/10.1149/10204.0053ecst
 
2020 ■
Elkashlan, RY, Rodriguez, R, Yadav, S, Khaled, A, Peralagu, U, Alian, A, Waldron, N, Zhao, M, Wambacq, P, Parvais, B & Collaert, N 2020, 'Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs', IEEE Transactions on Electron Devices, vol. 67, no. 11, 9186848, pp. 4592-4596. https://doi.org/10.1109/TED.2020.3017467, https://doi.org/10.1109/TED.2020.3017467
Takakura, K, Putcha, V, Simoen, E, Alian, AR, Peralagu, U, Waldron, N, Parvais, B & Collaert, N 2020, 'Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation', IEEE Transactions on Electron Devices, vol. 67, no. 8, pp. 3062-3068. https://doi.org/10.1109/TED.2020.3002732
Syshchyk, O, Hsu, B, Yu, H, Motsnyi, V, Vais, A, Kunert, B, Mols, Y, Alcotte, R, Puybaret, R, Waldron, N, Soussan, P, Boulenc, P, Karve, G, Simoen, E, Collaert, N, Puers, B & Van Hoof, C 2020, 'Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates', Physical Review Applied, vol. 14, no. 2, 024093. https://doi.org/10.1103/PhysRevApplied.14.024093
Vandooren, A, Wu, Z, Parihar, N, Franco, J, Parvais, B, Matagne, P, Debruyn, H, Mannaert, G, Devriendt, K, Teugels, L, Vecchio, E, Radisic, D, Rosseel, E, Hikavyy, A, Chan, BT, Waldron, N, Mitard, J, Besnard, G, Alvarez, A, Gaudin, G, Schwarzenbach, W, Radu, I, Nguyen, BY, Huet, K, Tabata, T, Mazzamuto, F, Demuynck, S, Boemmels, J, Collaert, N & Horiguchi, N 2020, 3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters. in 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings., 9265026, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2020-June, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020, Honolulu, United States, 16/06/20. https://doi.org/10.1109/VLSITechnology18217.2020.9265026
Parvais, B, Peralagu, U, Vais, A, Alian, A, Witters, L, Mols, Y, Walke, A, Ingels, M, Yu, H, Putcha, V, Khaled, A, Rodriguez, R, Sibaja-Hernandez, A, Yadav, S, Elkashlan, R, Baryshnikova, M, Mannaert, G, Alcotte, R, Kunert, B, Simoen, E, Zhao, E, De Jaeger, B, Fleetwood, D, Langer, R, Zhao, M, Wambacq, P, Waldron, N & Collaert, N 2020, '(Invited) Advanced Transistors for High Frequency Applications', ECS Transactions, vol. 97, no. 27, pp. 27-38. https://doi.org/10.1149/09705.0027ecst
Putcha, V, Bury, E, Franco, J, Walke, A, Zhao, SE, Peralagu, U, Zhao, M, Alian, A, Kaczer, B, Waldron, N, Linten, D, Parvais, B & Collaert, N 2020, Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. in 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings., 9129251, IEEE International Reliability Physics Symposium Proceedings, vol. 2020-April, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Virtual, Online, United States, 28/04/20. https://doi.org/10.1109/IRPS45951.2020.9129251
 
2018 ■
Vandooren, A, Franco, J, Parvais, B, Wu, Z, Witters, L, Walke, A, Li, W, Peng, L, Deshpande, V, Bufler, FM, Rassoul, N, Hellings, G, Jamieson, G, Inoue, F, Verbinnen, G, Devriendt, K, Teugels, L, Heylen, N, Vecchio, E, Zheng, T, Rosseel, E, Vanherle, W, Hikavyy, A, Chan, BT, Ritzenthaler, R, Besnard, G, Schwarzenbach, W, Gaudin, G, Radu, I, Nguyen, BY, Waldron, N, De Heyn, V, Mocuta, D & Collaert, N 2018, '3-D Sequential Stacked Planar Devices Featuring Low-Temperature Replacement Metal Gate Junctionless Top Devices With Improved Reliability', IEEE Transactions on Electron Devices, vol. 65, no. 11, 8487028, pp. 5165-5171. https://doi.org/10.1109/TED.2018.2871265
Vandooren, A, Franco, J, Parvais, B, Wu, Z, Witters, L, Walke, A, Li, W, Peng, L, Desphande, V, Bufler, FM, Rassoul, N, Hellings, G, Jamieson, G, Inoue, F, Verbinnen, G, Devriendt, K, Teugels, L, Heylen, N, Vecchio, E, Zheng, T, Rosseel, E, Vanherle, W, Hikavyy, A, Chan, BT, Ritzenthaler, R, Besnard, G, Schwarzenbach, W, Gaudin, G, Radu, I, Nguyen, BY, Waldron, N, Heyn, VD, Mocuta, D & Collaert, N 2018, 3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525°C with improved reliability. in 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018., 8510705, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2018-June, Institute of Electrical and Electronics Engineers Inc., pp. 69-70, 38th IEEE Symposium on VLSI Technology, VLSI Technology 2018, Honolulu, United States, 18/06/18. https://doi.org/10.1109/VLSIT.2018.8510705
Vandooren, A, Parvais, B, Witters, L, Walke, A, Vais, A, Merckling, C, Lin, D, Waldron, N, Wambacq, P, Mocuta, D & Collaert, N 2018, 3D technologies for analog/RF applications. in 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017. vol. 2018-March, 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017, vol. 2018-March, Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017, Burlingame, United States, 16/10/17. https://doi.org/10.1109/S3S.2017.8308746
Mallik, A, Vandooren, A, Witters, L, Walke, A, Franco, J, Sherazi, Y, Weckx, P, Yakimets, D, Bardon, M, Parvais, B, Debacker, P, Ku, BW, Lim, SK, Mocuta, A, Mocuta, D, Ryckaert, J, Collaert, N & Raghavan, P 2018, The impact of sequential-3D integration on semiconductor scaling roadmap. in 2017 IEEE International Electron Devices Meeting, IEDM 2017. Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 32.1.1-32.1.4, 63rd IEEE International Electron Devices Meeting, IEDM 2017, San Francisco, United States, 2/12/17. https://doi.org/10.1109/IEDM.2017.8268483
 
2015 ■
Thean, AV-Y, Yakimets, D, Huynh, BT, Schuddinck, P, Sakhare, S, Bardon, MG, Sibaja-Hernandez, A, Ciofi, I, Eneman, G, Veloso, A, Ryckaert, J, Raghavan, P, Mercha, A, Tokei, Z, Verkest, D, Wambacq, P, De Meyer, K & Collaert, N 2015, Vertical device architecture for 5nm and beyond: device & circuit implications. in 2015 Symposium on VLSI Technology and Circuits., T26, IEEE, pp. 26-27, 2015 Symposium on VLSI Technology and Circuits, Kyoto, Japan, 15/06/15. https://doi.org/10.1109/VLSIT.2015.7223689
 
2010 ■
Collaert, N, Von Arnim, K, Rooyackers, R, Vandeweyer, T, Mercha, A, Parvais, B, Witters, L, Nackaerts, A, Sanchez, EA, Demand, M, Hikavyy, A, Demuynck, S, Devriendt, K, Bauer, F, Ferain, I, Veloso, A, De Meyer, K, Biesemans, S & Jurczak, M 2010, Low-voltage scaled 6T FinFET SRAM cells. in Emerging Technologies and Circuits. Lecture Notes in Electrical Engineering, vol. 2021 LNEE, pp. 55-66, International Conference on Integrated Circuit Design and Technology, ICICDT 2008, Grenoble, France, 2/06/08. https://doi.org/10.1007/978-90-481-9379-0_4
 
2008 ■
Fulde, M, Kuttner, F, Arnim, KV, Parvais, B, Mercha, A, Collaert, N, Rooyackers, R, Becherer, M, Schmitt-Landsiedel, D & Knoblinger, G 2008, A 10-bit current-steering FinFET D/A converter. in 2008 IEEE International SOI Conference Proceedings., 4656311, Proceedings - IEEE International SOI Conference, pp. 95-96, 2008 IEEE International SOI Conference, New Paltz, NY, United States, 6/10/08. https://doi.org/10.1109/SOI.2008.4656311
 
2007 ■
Subramanian, V, Mercha, A, Parvais, B, Loo, J, Gustin, C, Dehan, M, Collaert, N, Jurczak, M, Groeseneken, G, Sansen, W & Decoutere, S 2007, 'Impact of fin width on digital and analog performances of n-FinFETs', Solid-State Electronics, vol. 51, no. 4 SPEC. ISS., pp. 551-559. https://doi.org/10.1016/j.sse.2007.02.003
 
2006 ■
Parvais, B, Gustin, C, De Heyn, V, Loo, J, Dehan, M, Subramanian, V, Mercha, A, Collaert, N, Rooyackers, R, Jurczak, M, Wambacq, P & Decoutere, S 2006, Suitability of FinFET technology for low-power mixed-signal applications. in 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06., 1669383, 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06, IEEE Computer Society, Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference, Padova, Italy, 24/05/06. https://doi.org/10.1109/icicdt.2006.220796