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Publication 24 Background

A CMOS compatible III-v-on-300 mm SI technology for future high-speed communi...

Publication 32 Background

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si s...

Publication 1805 Background

Environmental Analysis of RF Substrates

Publication 33 Background

An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF App...

Publication 480 Background

Parasitic side channel formation due to ion implantation isolation of GaN HEM...

Publication 510 Background

Time Dependence of RF Losses in GaN-on-Si Substrates

Publication 506 Background

Thermal budget increased alloy disorder scattering of 2DEG in III-N heterostr...

Publication 624 Background

Solid state qubits: How learning from CMOS fabrication can speed-up progress ...

Publication 2007 Background

Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel ...

Publication 2056 Background

Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to ...

Publication 2024 Background

Experimental Validation of Process-Induced Variability Aware SPICE Simulation...

Publication 1992 Background

A BSIM-Based Predictive Hot-Carrier Aging Compact Model