Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses
Yang, Y, Yu, H, Tsai, M-C, Lin, W-T, Kuo, Y-C, Sullivan, BO, Rathi, A, Gupta, A, Yadav, S, Alian, A, Peralagu, U, Parvais, B, Collaert, N & Wu, T-L 2025, Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses. in 2025 IEEE International Reliability Physics Symposium (IRPS). 2025 edn, IEEE International Reliability Physics Symposium Proceedings, IEEE, Monterey, CA, USA, pp. P73.RF-1-P73.RF-5. https://doi.org/10.1109/IRPS48204.2025.10983187
Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability
Yu, H, ElKashlan, R, Tsai, M-C, Yang, Y, Guenach, M, Kuo, Y-C, Yadav, S, Sullivan, BO, Rathi, A, Gupta, A, Xiao, D, Desset, C, Alian, A, Peralagu, U, Afanasiev, V, Wu, T-L, Parvais, B & Collaert, N 2025, Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. in 2025 IEEE International Reliability Physics Symposium (IRPS). 2025 edn, IEEE International Reliability Physics Symposium Proceedings, IEEE, Monterey, CA, USA, pp. 11C.1-1-11C.1-6. https://doi.org/10.1109/IRPS48204.2025.10983812
Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses
Yang, Y, Yu, H, Tsai, M-C, Lin, W-T, Kuo, Y-C, Sullivan, BO, Rathi, A, Gupta, A, Yadav, S, Alian, A, Peralagu, U, Parvais, B, Collaert, N & Wu, T-L 2025, Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses. in 2025 IEEE International Reliability Physics Symposium (IRPS). 2025 edn, IEEE International Reliability Physics Symposium Proceedings, IEEE, Monterey, CA, USA, pp. P73.RF-1-P73.RF-5. https://doi.org/10.1109/IRPS48204.2025.10983187
Physical Insights into High Current Collapse under ON-state Stress in RF GaN HEMTs
Gupta, A, Yu, H, Yadav, S, Alian, A, Peralagu, U, Jang, E-S, Kuo, Y-C, Collaert, N & Parvais, B 2025, Physical Insights into High Current Collapse under ON-state Stress in RF GaN HEMTs. in 2025 IEEE International Reliability Physics Symposium (IRPS). 2025 edn, IEEE International Reliability Physics Symposium Proceedings, IEEE, Monterey, CA, USA, pp. 9A.3-1-9A.3-6. https://doi.org/10.1109/IRPS48204.2025.10983392
Perspectives on GaN MISHEMT Power Amplifer vs Positive Gate Bias Instability
Yu, H, ElKashlan, R, Tsai, M-C, Yang, Y, Guenach, M, Kuo, Y-C, Yadav, S, Sullivan, BO, Rathi, A, Gupta, A, Xiao, D, Desset, C, Alian, A, Peralagu, U, Afanasiev, V, Wu, T-L, Parvais, B & Collaert, N 2025, Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. in 2025 IEEE International Reliability Physics Symposium (IRPS). 2025 edn, IEEE International Reliability Physics Symposium Proceedings, IEEE, Monterey, CA, USA, pp. 11C.1-1-11C.1-6. https://doi.org/10.1109/IRPS48204.2025.10983812
Ge Devices: A Potential Candidate for Sub-5-nm Nodes?
Sharan, N, Eneman, G, Collaert, N, Parvais, B, Spessot, A, Mocuta, A, Shaik, KA, Jang, D, Schuddinck, P, Yakimets, D, Bardon, MG, Mitard, J, Arimura, H & Bufler, FM 2019, 'Ge Devices: A Potential Candidate for Sub-5-nm Nodes?', IEEE Transactions on Electron Devices, vol. 66, no. 11, 8868097, pp. 4997-5002. https://doi.org/10.1109/TED.2019.2944336
An in-depth study of high-performing strained germanium nanowires pFETs
Mitard, J, Jang, D, Eneman, G, Arimura, H, Parvais, B, Richard, O, Van Marcke, P, Witters, L, Capogreco, E, Bender, H, Ritzenthaler, R, Mertens, H, Hikavyy, A, Loo, R, Dekkers, H, Sebaai, F, Milenin, A, Horiguchi, N, Mocuta, A, Mocuta, D & Collaert, N 2018, An in-depth study of high-performing strained germanium nanowires pFETs. in 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018., 8510666, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2018-June, Institute of Electrical and Electronics Engineers Inc., pp. 83-84, 38th IEEE Symposium on VLSI Technology, VLSI Technology 2018, Honolulu, United States, 18/06/18. https://doi.org/10.1109/VLSIT.2018.8510666
A 23 GHz Low-Phase-Noise Transformer-Feedback VCO in 22nm FD-SOI with a FOMT of 191dBc/Hz
Zong, Z, Tsai, C-H, Pepe, F, Wambacq, P, Mangraviti, G, Liu, Y, Shi, Q & Parvais, B 2018, A 23 GHz Low-Phase-Noise Transformer-Feedback VCO in 22nm FD-SOI with a FOMT of 191dBc/Hz. in 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). IEEE, Burlingame, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018, Burlingame, United States, 15/10/18. https://doi.org/10.1109/S3S.2018.8640187
A 42 mW 200 fs-Jitter 60 GHz Sub-Sampling PLL in 40 nm CMOS
Szortyka, V, Shi, Q, Raczkowski, K, Parvais, B, Kuijk, M & Wambacq, P 2015, 'A 42 mW 200 fs-Jitter 60 GHz Sub-Sampling PLL in 40 nm CMOS', IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 50, no. 9, pp. 2025-2036. https://doi.org/10.1109/JSSC.2015.2442998
A four-path 60GHz phased-array receiver with injection-locked LO, hybrid beamforming and analog baseband section in 90nm CMOS
Raczkowski, K, Mangraviti, G, Szortyka, V, Spagnolo, A, Parvais, B, Vandebriel, R, Vidojkovic, V, Soens, C, D'Amico, S & Wambacq, P 2012, A four-path 60GHz phased-array receiver with injection-locked LO, hybrid beamforming and analog baseband section in 90nm CMOS. in 2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 - Digest of Papers., 6242315, Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, pp. 431-434, 2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012, Montreal, QC, Canada, 17/06/12. https://doi.org/10.1109/RFIC.2012.6242315
Deep submicron CMOS for millimeter wave power applications
Ferndahl, M, Nemati, H, Parvais, B, Zirath, H & Decoutere, S 2008, 'Deep submicron CMOS for millimeter wave power applications', IEEE Microwave and Wireless Components Letters, vol. 18, no. 5, 4497806, pp. 329-331. https://doi.org/10.1109/LMWC.2008.922122
Stochastic matching properties of FinFETs
Gustin, C, Mercha, A, Loo, J, Subramanian, V, Parvais, B, Dehan, M & Decoutere, S 2006, 'Stochastic matching properties of FinFETs', IEEE Electron Device Letters, vol. 27, no. 10, pp. 846-848. https://doi.org/10.1109/LED.2006.882524
Suitability of FinFET technology for low-power mixed-signal applications
Parvais, B, Gustin, C, De Heyn, V, Loo, J, Dehan, M, Subramanian, V, Mercha, A, Collaert, N, Rooyackers, R, Jurczak, M, Wambacq, P & Decoutere, S 2006, Suitability of FinFET technology for low-power mixed-signal applications. in 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06., 1669383, 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06, IEEE Computer Society, Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference, Padova, Italy, 24/05/06. https://doi.org/10.1109/icicdt.2006.220796
Advanced process modules for (sub-) 45nm analog/RF CMOS - technology description and modeling challenges
Decoutere, S, Subramanian, V, Loo, J, Gustin, C, Parvais, B, Dehan, M & Mercha, A 2006, Advanced process modules for (sub-) 45nm analog/RF CMOS - technology description and modeling challenges. in Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006., 4057615, Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006, IEEE Computer Society, pp. 221-224, 1st European Microwave Integrated Circuits Conference, EuMIC 2006, Manchester, United Kingdom, 10/09/06. https://doi.org/10.1109/EMICC.2006.282792
MoM simulation of signal-to-noise patterns in infinite and finite receiving antenna arrays
Craeye, C, Parvais, B & Dardenne, X 2004, 'MoM simulation of signal-to-noise patterns in infinite and finite receiving antenna arrays', IEEE Transactions on Antennas and Propagation, vol. 52, no. 12, pp. 3245-3256. https://doi.org/10.1109/TAP.2004.836416